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Index N : NE325S01,NE32584C,NDS352P,
NE325S01
Mfg:NEC D/C:07+ Vendor:Other Category:Other
The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.NE32584C
Mfg:NEC Pack:SOT D/C:06+ Vendor:Other Category:Other
The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.NE32500
Vendor:Other Category:Other
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make NE325...NE32484A
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.NE32400
Mfg:NEC Pack:N/A D/C:N/A Vendor:Other Category:Other
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make NE324...NE3210S01
Mfg:NEC D/C:07+ Vendor:Other Category:Other
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.NE321000
Vendor:Other Category:Other
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make NE321000 suitable for DBS and another commercial systems, industri...NE3104-VC11A
Vendor:Other Category:Other
NE3104-VC11 series is newly developed for photo color printers as (color print) thermal printheads, high speed, high quality printing is acheved with several new technologies. Printing method is available for subliminati...NE3104-RE10A
Vendor:Other Category:Other
The NE3104-RE10 Series are suitable for photo printers which can make direct print out from digital still cameras and mobile phones. ROHM!s energy saving technology based on "stp-free" strucure enables high speed, and hi...NE3004-WA30A
Vendor:Other Category:Other
NE-WA30 series are the thermal printheads developed for high-speed / high-resolution printing for the market of bar-code printer & scale-printer, based on "step-free" structure. Thesprintheads realize ultra-highspeed...NE3004-VA30A
Vendor:Other Category:Other
NE-VA30 series are the thermal printheads developed for high-speed / high-resolution printing for the market of bar-code printer & scale-printer, based on "step-free" structure. Thesprintheads realize ultra-highspeed...NE3004-VA10A
Vendor:Other Category:Other
The NE3004-VA10A is a near edge thin-film thermal printhead where the printing medium passes straight through. This printhead is capable of printing speeds up to 8 inch / second and is suited for label printers.NE3002-WA30A
Vendor:Other Category:Other
NE-WA30 series are the thermal printheads developed for high-speed / high-resolution printing for the market of bar-code printer & scale-printer, based on "step-free" structure These printheads realize ultra-highspee...NE3002-VA30A
Vendor:Other Category:Other
NE-VA30 series are the thermal printheads developed for high-speed / high-resolution printing for the market of bar-code printer & scale-printer, based on "step-free" structure These printheads realize ultra-highspee...NE3002-VA10A
Vendor:Other Category:Other
The NE3002-VA10A is a near edge thin-film thermal printhead, where the printing medium passes straight through at printing speeds up to 8 inch / second. It is suited for high-speed label printers.NE3002-GV10A
Vendor:Other Category:Other
A near-edge structure and Real Flat glazing technology make NE3002-GV10A possible to use the NE printhead for straight path printing. This thermal printhead is made for card and heavy stock paper applications. Because th...NE27200
Vendor:Other Category:Other
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. NE27200's excellent low noise and high associated gain make...NE25339
Vendor:Other Category:Other
The NE253 is an 800 m dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be ...NE25139
Vendor:Other Category:Other
The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realize...NE25118
Vendor:NEC Category:Discrete Semiconductor Products
FET 900MHZ SOT-343The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be reali...NE24283B
Vendor:Other Category:Other
The NE24283B is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The NE24283B features mushroom shaped TiAl gates for decreased...NE24200
Mfg:NEC Pack:N/A D/C:N/A Vendor:Other Category:Other
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. NE24200's excellent low noise and high associated gain make...NE23383B
Vendor:Other Category:Other
The NE23383B is a heterojunction FET that utilizes the heterojunction to create high mobility electrons. The device features mushroom shaped gate for decreased gate resistance and improved power handling capabilities. Th...NE23300
Vendor:Other Category:Other
The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. NE23300's excellent low noi...NE21935
Vendor:Other Category:Other
The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz.NE219
Vendor:Other Category:Other
The NE219 is NPN silicon bipolar transistor. It is designed for small signal amplifier and ocillator applications up to 6GHz. The device is available in either chip form or in a variety of packages. Features of the NE21...NE2004-VA10A
Vendor:Other Category:Other
The NE2004VA10A is a near edge thinfilm thermal printhead, where the printing medium passes straight through at printing speeds up to 10 inch / second. It is suited for highspeed label printers.NE2002-VA10A
Vendor:Other Category:Other
The NE2002VA10A is a near edge thinfilm thermal printhead, where the printing medium passes straight through at printing speeds up to 10 inch / second. It is suited for highspeed label printers.NE2001-VA20A
Vendor:Other Category:Other
The NE2001-VA20A is a near edge thin-film thermal printhead where the printing medium passes straight through,suited for card printers.NE-18
Vendor:Other Category:Other
NE1618
Mfg:PHILIPS Pack:SOP Vendor:Other Category:Other
The NE1618 is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. NE1618 can replace the NE1617 for a more precise measurement to the remote temperat...NE1617A
Mfg:PHLL Pack:SSOP Vendor:Other Category:Other
NE1617
Mfg:PHILIPS Pack:SOP Vendor:Other Category:Other
The NE1617 is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. The remote sensor is a diode connected transistor. NE1617 can be in the form of eit...NE021
Vendor:Other Category:Other
NEC`s NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 ser...NE/SA604A
Vendor:Other Category:Other
The NE/SA604A is an improved monmlithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers,quadrature detector,muting,logarithmic received signal strength indictor,and voltage regulator.T...NDY0505
Mfg:C&D Pack:DIP-8 D/C:2008+ Vendor:Other Category:Other
The NDY series is a range of low profile DC/DC converters offering a single regulated output over a 2:1 input voltage range. All parts deliver 3W output power up to 85, without heatsinking, except the 4.5V to 9V input vo...NDV8501
Vendor:Other Category:Other
PlatformThe MediamaticsTM NDV8501 DVD on a Chip Processor provides next generation features and cost effective system integration for Universal DVD Players and Internet connected Players/Recorders. Integration of an indu...NDV8401
Mfg:NS Pack:QFP D/C:04+ Vendor:Other Category:Other
The MediamaticsTM NDV8401 DVD on a Chip Processor provides features and cost effective system integration for Universal DVD Players and Internet connected Players/Recorders. Integration of an industry standard RISC proce...NDTM
Vendor:Other Category:Other
NDTM Tantalum Electrolytic CapacitorsNDTM Radial; DippedNDT456P
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 7.5A SOT-223-4Power SOT P-Channel enhancement mode power field effect transistors NDT456P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz...NDT455N
Mfg:Fairchild Pack:Sot-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 11.5A SOT-223These N-Channel logic level enhancement mode power field effect transistors NDT455N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to...NDT454P
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET P-CHAN 30V 5.9A SOT-223Power SOT P-Channel enhancement mode power field effect transistors NDT454P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz...NDT453N
Mfg:FAIRCHILD Pack:TO252 D/C:2000 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 8A SOT-223-4Power SOT N-Channel enhancement mode power field effect transistors NDT453N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz...NDT452P
D/C:07+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 3A SOT-223-4Power SOT P-Channel enhancement mode power field effect transistors NDT452P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz...NDT452AP
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 5A SOT-223-4Power SOT P-Channel enhancement mode power field effect transistors NDT452AP are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimi...NDT451N
Mfg:1315 Pack:FSC Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 5.5A SOT-223-4Power SOT N-Channel enhancement mode power field effect transistors NDT451N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz...NDT451AN
Mfg:FAI Pack:2001 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 7.2A SOT-223-4Power SOT N-Channel enhancement mode power field effect transistors NDT451AN are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimi...NDT410EL
Vendor:Other Category:Other
The NDT410EL has the following features including (1)high density cell design for extremely low RDS(ON),(2)high power and current handling capability in a widely used surface mount package. Power SOT N-channel logic lev...NDT3055L
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 60V 4A SOT-223-4These logic level N-Channel enhancement mode power field effect transistors NDT3055L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored t...NDT3055
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 60V 4A SOT-223-4These N-Channel enhancement mode power field effect transistors NDT3055 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDT2955
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 60V 2.5A SOT-223-4Power SOT P-Channel enhancement mode power field effect transistors NDT2955 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimiz...NDT2412
Vendor:Other Category:Other
The NDT series is a range of low profile DC- DC converters offering dual outputs over a 2:1 input voltage range. All parts deliver 3W output power up to 85 without heatsinking A flyback oscillator design with isolated fe...NDT014L
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CHAN 60V 2.8A SOT-223These N-Channel logic level enhancement mode power field effect transistors NDT014L are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to ...NDT014
Mfg:FAIRC Pack:SOT-223 D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 60V 2.7A SOT-223-4Power SOT N-Channel enhancement mode power field effect transistors NDT014 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize...NDS9959
Mfg:SLX Pack:SMD Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET 2N-CH 50V 2A 8-SOICThese N-Channel enhancement mode power field effect transistors NDS9959 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9958
Mfg:NS Pack:3.9mm Vendor:Other Category:Other
These dual N- and P-Channel enhancement mode power field effect transistors NDS9958 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to...NDS9957
D/C:07+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors NDS9957 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9956A
Mfg:FAIRCHILD Pack:SMD Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET 2N-CH 30V 3.7A 8-SOICThese N-Channel enhancement mode power field effect transistors NDS9956A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize o...NDS9955
Mfg:Ns Pack:SMD-8 Vendor:Other Category:Other
SO-8 N-Channel enhancement mode power field effect transistors NDS9955 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide supe...NDS9953A
Mfg:NS Pack:SOP D/C:SOP-8 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET 2P-CH 30V 2.9A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9953A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize o...NDS9952A
Mfg:FAI Pack:1141 D/C:2 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N+P 30V 2.9A 8-SOICThese dual N- and P-channel enhancement mode power field effect transistors NDS9952A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored t...NDS9948
Mfg:FAIRCHI Pack:SOP8 Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET 2P-CH 60V 2.3A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9948 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minim...NDS9947
Mfg:FSC Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET 2P-CH 20V 3.5A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9947 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9945
Mfg:FAI Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET 2N-CH 60V 3.5A 8-SOICSO-8 N-Channel enhancement mode power field effect transistors NDS9945 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide supe...NDS9936
Mfg:FAIRCHI Pack:SMD Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET 2N-CH 30V 5A 8-SOICThese N-Channel enhancement mode power field effect transistors NDS9936 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9933A
Mfg:NS Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET P-CH DUAL 20V 2.8A 8-SOICThis P-Channel enhancement mode power field effect transistor NDS9933A is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-s...NDS9925A
Mfg:NA D/C:03+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CH DUAL 20V 4.5A 8-SOICSO-8 N-Channel enhancement mode power field effect transistors NDS9925A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9435A
Mfg:FAIRCHI Pack:SMD Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 5.3A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9435A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize o...NDS9430A
Mfg:FAIRCHILD Pack:S0P-8 D/C:5 Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET P-CHAN 20V 5.3A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9430A are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9410S
Mfg:96+ Pack:NS Vendor:Other Category:Other
SO-8 N-Channel enhancement mode power field effect transistors NDS9410S are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9410A
Mfg:FAIRCHI Pack:SMD Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 7.3A 8-SOICThis N-Channel Logic Level MOSFET NDS9410A is producedusing Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching...NDS9407
Mfg:FAIRCHILD Pack:SOP-8 D/C:5 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 60V 3A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9407 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS9400A
Mfg:NS Pack:SOP/8 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 3.4A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS9400A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize o...NDS8961
Mfg:FSC Pack:3.9mm Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CH DUAL 30V 3.1A 8-SOICSO-8 N-Channel enhancement mode power field effect transistors NDS8961 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-...NDS8958
Mfg:ON Pack:sop8 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N+P 30V 4A 8-SOICThese dual N- and P-Channel enhancement mode power field effect transistors NDS8958 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to...NDS8947
Mfg:FAIRCHAL Pack:SOP8 D/C:02+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET 2P-CH 30V 4A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS8947 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8936
Mfg:NS Pack:SMD Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET 2N-CH 30V 5.3A 8-SOICThese N-Channel enhancement mode power field effect transistors NDS8936 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8934
Mfg:FSC Pack:SMD-8 Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET P-CH DUAL 20V 3.8A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS8934 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8928
Mfg:SN Vendor:Other Category:Other
NDS8926
Mfg:FAIRCHILD Pack:SI D/C:SOP8L Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors NDS8926 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8858H
Mfg:FSC Pack:3.9mm Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N+P 30V 4.8A 8-SOICThese Complementary MOSFET NDS8858H half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistanc...NDS8852H
Mfg:HNS BCPB V D D/C:02+ Vendor:Other Category:Other
These Complementary MOSFET NDS8852H half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistanc...NDS8839H
Mfg:FAIRCHAL Pack:SOP8 D/C:08+ Vendor:Other Category:Other
These Complementary MOSFET NDS8839H half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistanc...NDS8435A
Mfg:FSC/NS Pack:SOP Vendor:Fairchild Optoelectronics Group Category:Discrete Semiconductor Products
MOSFET P-CH 30V 7.9A 8-SOICSO-8 P-Channel enhancement mode power field effect transistors NDS8435A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8435
Mfg:NS Pack:16 D/C:04+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET SINGLE P-CH -30V SO-8SO-8 P-Channel enhancement mode power field effect transistors NDS8435 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-...NDS8434A
Mfg:FSC * Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CHAN 20V 7.8A 8SOICSO-8 P-Channel enhancement mode power field effect transistors NDS8434A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8434
Mfg:FSC Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 20V 6.5A 8-SOICThese P-Channel enhancement mode power field effect transistors NDS8434 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8433
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
These P-Channel enhancement mode power field effect transistors NDS8433 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8426A
Mfg:NDS() Pack:SMD-8 D/C:09+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CH 20V 10.5A 8-SOICSO-8 N-Channel enhancement mode power field effect transistors NDS8426A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8426
Mfg:NS Pack:11 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors NDS8426 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8425
Mfg:FSC Pack:SOP Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CHAN 20V 7.4A 8-SOICThese N-Channel enhancement mode power field effect transistors NDS8425 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8410S
Mfg:96+ Pack:NS Vendor:Other Category:Other
SO-8 N-Channel enhancement mode power field effect transistors NDS8410S are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8410A
Mfg:FAI Pack:SOP-8 D/C:00+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CH 30V 8-SOICSO-8 N-Channel enhancement mode power field effect transistors NDS8410A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS8410
Mfg:NS D/C:03+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 10A 8-SOICThese N-Channel enhancement mode power field effect transistors NDS8410 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on...NDS7002A
Mfg:N/A Pack:N/A D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 60V 280MA SOT-23These N-Channel enhancement mode field effect transistors NDS7002A are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while p...NDS356P
Mfg:NS Pack:1997 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 20V 1.1A SOT-23These P-Channel logic level enhancement mode power field effect transistors NDS356P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to...NDS356AP
Mfg:NS Pack:SOT23 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 30V 1.1A SSOT3SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors NDS356AP are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tai...NDS355N
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 1.6A SOT-23These N-Channel logic level enhancement mode power field effect transistors NDS355N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to...NDS355AN
Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET N-CH 30V 1.7A SSOT3SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors NDS355AN are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tai...NDS352P
Mfg:FSC Pack:00+ D/C:1200 Vendor:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products
MOSFET P-CH 20V 850MA SSOT3These P-Channel logic level enhancement mode power field effect transistors NDS352P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to...