Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Transistor Polarity
: N and P-Channel
Package / Case
: SOIC-8 Narrow
Resistance Drain-Source RDS (on)
: 0.045 Ohms
Configuration
: Dual Common Quad Drain
Continuous Drain Current
: 5.7 A, - 4 A
Features: `N-Channel 5.7A, 30V, RDS(ON)=0.045 @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.09 @ VGS=-10V.
`High density cell design or extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Matched pair for equal input capacitance and power capabilitySpecifications
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
30
20
5.7
15 |
-30
-20
-4
15 |
V
V
A
W
°C |
|
ID |
Drain Current Continuous Pulsed |
(Note 1) |
|
PD |
Maximum Power Dissipation
(Single Device) |
(Note 1a)
(Note 1b)
(Note 1c) |
2.5
1.2
1
-55 to 150 |
| TJ,TSTG |
Operating and Storage Junction Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
(Single Device)
Thermal Resistance, Junction-to-Case
(Single Device) |
(Note 1a)
(Note 1) |
50
25 |
°C/W
°C/W |
DescriptionThese Complementary MOSFET NDS8839H half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS8839H is particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
NDS8839H Data Sheet
