NDS8410

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

·10A, 30V. R_DS(ON) = 0.015W @ V_GS = 10V R_DS(ON) = 0.020W @ V_GS = 4.5V.
·High density cell design for extremely low RDS(ON).
·High power and current handling capability in a widely used surface mount package.


Pinout




Specifications

Symbol	Parameter		NDS8410	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 20 ± 10 ± 50 2.5 1.2 1 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

Description

These N-Channel enhancement mode power field effect transistors NDS8410 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8410 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDS8410
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	15 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 15V
Power - Max	1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NDS8410 NDS8410 NDS8410DKR ND NDS8410DKRND NDS8410DKR