Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Drain-Source Breakdown Voltage
: 30 V
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain Triple Source
Package / Case
: SOIC-8 Narrow
Continuous Drain Current
: 10.8 A
Resistance Drain-Source RDS (on)
: 7.7 Ohms
Features: `10.8 A, 30 V. RDS(ON) = 0.012 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 4.5 V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used
`surface mount package.Pinout
Specifications
|
Symbol |
Parameter |
NDS356P |
Units |
|
VDSS
VGSS |
Drain-Source Voltage
Gate-Source Voltage |
30
±20
10.8
50
2.5
1.2
1
-55 to 150 |
V
V
A
W
°C |
|
ID |
Drain Current - Continuous
- Pulsed |
(Note 1a) |
|
PD |
Maximum Power Dissipation |
(Note 1a)
(Note 1b)
(Note 1c) |
| TJ,TSTG |
Operating and Storage Temperature Range |
THERMAL CHARACTERISTICS
RJA
RJC |
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case |
(Note 1a)
(Note 1) |
50
25 |
° |
DescriptionSO-8 N-Channel enhancement mode power field effect transistors NDS8410A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8410A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS8410A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 10.8A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 10.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 1620pF @ 15V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 22nC @ 5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS8410A
NDS8410A
|
NDS8410A Data Sheet
