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NDS8410S

Features: `8.6 A, 30 V. RDS(ON) = 0.02 @ VGS = 10 V.`High density cell design for extremely low RDS(ON).`High power and current handling capability in a widely used surface mount package.PinoutSpecifications Symbol Parameter NDS8410S Units VDSSVGSS Drain-Source VoltageGate-...

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NDS8410S: Features: `8.6 A, 30 V. RDS(ON) = 0.02 @ VGS = 10 V.`High density cell design for extremely low RDS(ON).`High power and current handling capability in a widely used surface mount package.PinoutSpec...

NDS8410S Data Sheet

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Part Number:
NDS8410S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`8.6 A, 30 V. RDS(ON) = 0.02 @ VGS = 10 V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
NDS8410S
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
30
±20
8.6
30
2.5
1.2
1
-55 to 150
V
V
A

W


°C
ID
 Drain Current - Continuous
- Pulsed		 (Note 1a)
PD
 Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC		 Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case		 (Note 1a)
(Note 1)

50
25

 °C/W
°C/W



Description

SO-8 N-Channel enhancement mode power field effect transistors NDS8410S are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8410S is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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