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NDS8426

Features: `9.9 A, 20 V. RDS(ON) = 0.015 @ VGS= 4.5 V.RDS(ON) = 0.020 @ VGS= 2.7 V.`High density cell design for extremely low RDS(ON).`High power and current handling capability in a widely used surface mount package.PinoutSpecifications Symbol Parameter NDS8426 Units VDSS Drain-Source...

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SeekIC No. : 004433294 Detail

NDS8426: Features: `9.9 A, 20 V. RDS(ON) = 0.015 @ VGS= 4.5 V.RDS(ON) = 0.020 @ VGS= 2.7 V.`High density cell design for extremely low RDS(ON).`High power and current handling capability in a widely used sur...

NDS8426 Data Sheet

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Part Number:
NDS8426
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`9.9 A, 20 V. RDS(ON) = 0.015  @ VGS= 4.5 V.
                       RDS(ON) = 0.020  @ VGS= 2.7 V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.


Pinout

Connection Diagram


Specifications

Symbol Parameter NDS8426 Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage 8 V
ID Drain Current - Continuous (Note 1a)
- Pulsed		 9.9 A
20
PD
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c)
 2.5 W
1.2
1
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 20 /W



Description

These N-Channel enhancement mode power field effect transistors NDS8426 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8426 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




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