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NE25118

FET 900MHZ SOT-343

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NE25118: FET 900MHZ SOT-343

NE25118 Data Sheet

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Part Number:
NE25118
Mfg:
NEC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
• LOW CRSS: 0.02 pF (TYP)
• HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz
• LOW NF: 1.1 dB TYP AT 900 MHz
• LG1 = 1.0 m, LG2 = 1.5 m, WG = 400 m
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
• LOW PACKAGE HEIGHT: 1.0 mm MAX


Specifications

SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 13
VG1S Gate 1 to Source Voltage V -4.5
VG2S Gate 2 to Source Voltage V -4.5
ID Drain Current mA IDSS
PT Total Power Dissipation mW 120
TCH Channel Temperature 125
TSTG Storage Temperature -55 to +125
Note:
1. Operation in excess of anyone of these parameters may result in permanent damage.


Description

The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a 4 pin super mini-mold package, (SOT-343 type). Maximum package height of 1.0 mm makes the NE25118 an ideal device for PCMCIA card applications.




Parameters:

Technical/Catalog InformationNE25118
VendorNEC
CategoryDiscrete Semiconductor Products
Transistor TypeDual Gate MESFET
Voltage - Rated 5V
Current Rating40mA
Package / CaseSC-70-4, SC-82AB, SOT-323-4, SOT-343
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names NE25118
NE25118



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