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NE321000

Features: • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz• Gate Length: Lg 0.20 m• Gate Width : Wg = 160 mSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage V...

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SeekIC No. : 004433329 Detail

NE321000: Features: • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz• Gate Length: Lg 0.20 m• Gate Width : Wg = 160 mSpecifications P...

NE321000 Data Sheet

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Part Number:
NE321000
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

• Super Low Noise Figure & High Associated Gain
  NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg 0.20 m
• Gate Width : Wg = 160 m


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS 3.0 V
Drain Current ID IDSS mA
Gate Current IG 100 A
Total Power Dissipation PtotNote 200 mW
Channel Temperature Tch 175
Storage Temperature Tstg 65 to +175

Note Chip mounted on an Alumina heatsink (size: 3 * 3* 0.6 t)


Description

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make NE321000 suitable for DBS and another commercial systems, industrial and space applications.




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