NE3210S01-T1B, US $ 1.97-1.97 , CEL, NE3210S01-T1B DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219192 Detail

NE3210S01-T1B: Transistors RF GaAs Super Lo Noise HJFET

NE3210S01-T1B Data Sheet

US $ 1.97~1.97 / Piece | Get Latest Price

Part Number:: NE3210S01-T1B
Mfg:: CEL
Supply Ability:: 5000

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Upload time: 2024/12/22

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What is this?

NE321000 evaluate
Features: • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB...
NE3210S01 evaluate
US $1.94 - 2.75 / Piece

Transistors RF GaAs Super Lo Noise HJFET
NE3210S01-A evaluate
MOSFET Super Lo Noise HJFET

Product Details

Quick Details

Technology Type :	pHEMT	Frequency :	12 GHz
Gain :	13.5 dB	Noise Figure :	0.35 dB
Forward Transconductance gFS (Max / Min) :	55 mS	Drain Source Voltage VDS :	4 V
Gate-Source Breakdown Voltage :	- 3 V	Continuous Drain Current :	70 mA
Maximum Operating Temperature :	+ 125 C	Power Dissipation :	165 mW
Mounting Style :	SMD/SMT	Package / Case :	SO-1

Description

Continuous Drain Current : 70 mA
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 12 GHz
Forward Transconductance gFS (Max / Min) : 55 mS
Gate-Source Breakdown Voltage : - 3 V
Gain : 13.5 dB
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Power Dissipation : 165 mW
Noise Figure : 0.35 dB
Package / Case : SO-1

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NE3210S01-T1B

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