Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Packaging
: Reel
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Configuration
: Single Quad Drain Triple Source
Drain-Source Breakdown Voltage
: - 30 V
Package / Case
: SOIC-8 Narrow
Resistance Drain-Source RDS (on)
: 0.13 Ohms
Continuous Drain Current
: - 3.4 A
Features: `-3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Rugged and reliable.Pinout
Specifications
| Symbol |
Parameter |
NDS9400A |
Units |
| VDSS |
Drain-Source Voltage |
-30 |
V |
| VGSS |
Gate-Source Voltage |
± 20 |
V |
| ID |
Drain Current - Continuous (Note 1a)
- Pulsed |
± 3.4 |
A |
| ± 10 |
| PD |
Maximum Power Dissipation (Note 1a)
(Note 1b)
(Note 1c) |
2.5 |
W |
| 1.2 |
| 1 |
| TJ,TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
|
| THERMAL CHARACTERISTICS |
| RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
50 |
/W |
| RJC |
Thermal Resistance, Junction-to-Case (Note 1) |
20 |
/W |
DescriptionThese P-Channel enhancement mode power field effect transistors NDS9400A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9400A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parameters: | Technical/Catalog Information | NDS9400A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 10V |
| Power - Max | 1W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDS9400A
NDS9400A
NDS9400ADKR ND
NDS9400ADKRND
NDS9400ADKR
|
NDS9400A Data Sheet
