NDS8936

MOSFET Dual N-Ch FET Enhancement Mode

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NDS8936 Picture
SeekIC No. : 00163116 Detail

NDS8936: MOSFET Dual N-Ch FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDS8936
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : +/- 5.3 A
Resistance Drain-Source RDS (on) : 0.035 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 0.035 Ohms
Continuous Drain Current : +/- 5.3 A


Features:

`5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V RDS(ON) = 0.05 @ VGS = 4.5V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDS8936
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
± 20
± 5.3
± 20
2
1.6
1
0.9
-55 to 150
V
V
A

W



°C
ID
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(No



Description

These N-Channel enhancement mode power field effect transistors NDS8936 are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDS8936 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Parameters:

Technical/Catalog InformationNDS8936
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5.3A
Rds On (Max) @ Id, Vgs35 mOhm @ 5.3A, 10V
Input Capacitance (Ciss) @ Vds 720pF @ 15V
Power - Max900mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs30nC @ 10V
Package / CaseSO-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS8936
NDS8936
NDS8936DKR ND
NDS8936DKRND
NDS8936DKR



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