NDS9952A

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Transistor Polarity : N and P-Channel
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 3.7 A, - 2.9 A


Features:

`N-Channel 3.7A, 30V, R<sub>DS(ON)</sub>=0.08 @ V<sub>GS</sub>=10V. P-Channel -2.9A, -30V, R<sub>DS(ON)</sub>=0.13 @ V<sub>GS</sub>=-10V.
`High density cell design or extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual (N & P-Channel) MOSFET in surface mount package.


Pinout




Specifications

Symbol	Parameter		N-Channel	P-Channel	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ± 20 ± 3.7 ± 15	-30 ± 20 ± 2.9 ± 10	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Dual Operation		2 1.6 1 0.9 -55 to 150
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
</TBO

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

°C/W °C/W

Description

These dual N- and P-channel enhancement mode power field effect transistors NDS9952A are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDS9952A is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDS9952A
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.7A, 2.9A
Rds On (Max) @ Id, Vgs	80 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	320pF @ 10V
Power - Max	900mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	SO-8
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS9952A NDS9952A NDS9952ACT ND NDS9952ACTND NDS9952ACT