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Index N : NESW064A,NESW064,NE856M03,
NESW064A
D/C:07+ Vendor:Other Category:Other
NESW064
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESW021
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESW020C
D/C:07+ Vendor:Other Category:Other
NESW017
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESW008D
D/C:07+ Vendor:Other Category:Other
NESW007A
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESW007
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESW006
Vendor:Other Category:Other
NESW005
D/C:08+ Vendor:Other Category:Other
NESR505D
D/C:07+ Vendor:Other Category:Other
NESM026A
D/C:08+ Vendor:Other Category:Other
NESM005A
D/C:08+ Vendor:Other Category:Other
NESL064A
D/C:07+ Vendor:Other Category:Other
NESG505C
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESG426C
D/C:08+ Vendor:Other Category:Other
NESG3031M14
Vendor:Other Category:Other
NESG3031M05
Vendor:Other Category:Other
NESG260234
Mfg:NEC Pack:SOT-89 Vendor:Other Category:Other
NESG250134
Vendor:Other Category:Other
The NESG250134 is a 3-pin power minimold (34 package).CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices...NESG2107M33
Vendor:Other Category:Other
NESG210719
Vendor:Other Category:Other
NESG2101M16
Vendor:Other Category:Other
NEC's NESG2101M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillatorsNESG2101M05
Mfg:NEC Pack:SOT-343 D/C:06+NOPB Vendor:Other Category:Other
NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NEC ...NESG2046M33
Vendor:Other Category:Other
NESG204619
Vendor:Other Category:Other
NESG2031M05
Vendor:Other Category:Other
NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NEC...NESG2030M04
Vendor:Other Category:Other
The NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz, it is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA p...NESG2021M16
Vendor:Other Category:Other
NEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators...NESG2021M05
Mfg:NEC Pack:SOT343 D/C:04+ Vendor:Other Category:Other
NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators...NESG064
D/C:07+ Vendor:Other Category:Other
NESG021
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESG017
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESG007A
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESE021
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESB505C
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESB426C
Vendor:Other Category:Other
NESB064
Vendor:Other Category:Other
NESB021
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESB017
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESB008A
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESB007A
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NESA064
D/C:07+ Vendor:Other Category:Other
NES-75
Vendor:Other Category:Other
NES-50
Vendor:Other Category:Other
NES2527B-30
Vendor:Other Category:Other
The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for i...NES-25
Vendor:Other Category:Other
NES2427P-60
Vendor:Other Category:Other
The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high line...NES2427P-45
Vendor:Other Category:Other
The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for WLL repeater and base station systems. It is capable of delivering 45 W of output power (CW) with high linear gai...NES1823P-50
Vendor:Other Category:Other
The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. NES1823P-50 is capable of delivering 50 W of output power (CW) w...NES1823P-45
Vendor:Other Category:Other
The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high l...NES1823P-30
Vendor:Other Category:Other
The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power (CW) with high l...NES1823P-140
Vendor:Other Category:Other
The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with hig...NES1823P-100
Vendor:Other Category:Other
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linea...NES1821B-30
Vendor:Other Category:Other
The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The NES1821B-30 has a 0.8 mm gate length fo...NES-150
Vendor:Other Category:Other
NES120
Vendor:Other Category:Other
NES-100
Vendor:Other Category:Other
NERGIZE
Vendor:Other Category:Other
NERGIZE has many features: 1. NERGIZE's Chemical System is Zinc-Manganese Dioxide (Zn/MnO2) (No Added Mercury or Cadmium), 2. Designation is ANSI-14D, IEC-R14, 3. Battery Voltage: 1.5 Volts, 4. Operating Temp: -18&...NEPW580BS
Vendor:Other Category:Other
NEPW570BS
Vendor:Other Category:Other
NEPW510BS
Vendor:Other Category:Other
NEPW500BS
Vendor:Other Category:Other
NEPW310BS
Vendor:Other Category:Other
NEPTUNE
Mfg:NEC Pack:QFP D/C:2004 Vendor:Other Category:Other
NEPE510AS
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NEMA6P
Vendor:Other Category:Other
NEM
Vendor:Other Category:Other
NEM Film CapacitorsNEM Film Capacitors; RadialNEL2301
Vendor:Other Category:Other
The NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliability.A variety of hermetic packages ...NEL2035F03-24
Vendor:Other Category:Other
NEL2035F03-24 of NPN epitaxial microwave power transistors s designed for 1.8-2 GHz PHS/PCN/PCS base station applications. t incorporates emitter ballast resistors, gold metallizations and ffers a high degree of reliabil...NEL2012F03-24
Vendor:Other Category:Other
The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ HS base station applications. NEL2012F03-24 is corporate emitter ballast resistors, gold metalizations and offers a ...NEL2004F02-24
Vendor:Other Category:Other
NEL2004F02-24 of NPN epitaxial microwave power transistors s designed for 1.8-2 GHz PHS/PCN/PCS base station applications.NEL2004F02-24 incorporates emitter ballast resistors, gold metallizations and ffers a high degree ...NEL200101-24
Vendor:Other Category:Other
NEL2001012-24 of NPN epitaxial microwave power transistors s designed for 1.8-2 GHz PHS/PCN/PCS base station applications.NEL200101-24 incorporates emitter ballast resistors, gold metallizations and ffers a high degree o...NEH series
Vendor:Other Category:Other
This is the description of NEV and NEH series: The NEV and NEH series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring high capacitance, low cost, and very small size...NEDR
Vendor:Other Category:Other
NEDR Double Layer CapacitorsNEDR Energy Back-Up Capacitors; Radial Leaded E-Cap DesignNEDL
Vendor:Other Category:Other
NEDL Double Layer CapacitorsNEDL Energy Back-Up Capacitors; Radial Leaded E-Cap DesignNED-75
Vendor:Other Category:Other
NED-50
Vendor:Other Category:Other
NED-35
Vendor:Other Category:Other
NECWB205
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NECW425B
Vendor:Other Category:Other
NECGB205
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NECG426B
Vendor:Other Category:Other
NECBB205
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
NECB426B
Vendor:Other Category:Other
NEC2501LK
Vendor:Other Category:Other
The NEC2501LK is one member of the high isolation voltage single transistor type multi photocoupler series (optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor). And NEC2...NEC2501-L-1-E3
Vendor:Other Category:Other
The NEC2501-L-1-E3 is one member of the high isolation voltage single transistor type multi photocoupler series (optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor). And...NEC2501KK
Vendor:Other Category:Other
The NEC2501KK is one member of the high isolation voltage single transistor type multi photocoupler series (optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor). And NEC2...NEC-15
Vendor:Other Category:Other
NE97833
Vendor:Other Category:Other
The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost.NE97733
Vendor:Other Category:Other
The NE97733 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97733 offers excellent performance and reliability at low cost.NE960R5
Vendor:Other Category:Other
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. NE960R5 is capable of delivering 0.5 watt of output power (CW) with high linear...NE960R2
Vendor:Other Category:Other
The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain...NE944
Vendor:Other Category:Other
The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs.The NE944 featu...NE894M13
Vendor:Other Category:Other
The NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, lowcurrent operation, low noise, and high gain. NEC's new low profile/flat lead style "M13" package is ideal...NE894M03
Vendor:Other Category:Other
NEC's NE894M03 transistor is designed for oscillator ap pli - ca tions above 3 GHz. The NE894M03 features low voltage, low current op er a tion, low noise, and high gain. NEC's low profile/flat lead style "M03" pack age ...NE88900
Vendor:Other Category:Other
The NE889 series of PNP silicon transistors is designed for ultra high speed current mode switching applications and microwave amplifiers up to 2GHz.The NE889 is available in serveral package styles and in chip from (NE8...NE856M23
Vendor:Other Category:Other
The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's NE856M23 new low...NE856M13
Vendor:Other Category:Other
The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/...NE856M03
Vendor:Other Category:Other
The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/...