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NESG2030M04

Transistors RF Silicon Germanium NPN SiGe High Freq

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SeekIC No. : 00221132 Detail

NESG2030M04: Transistors RF Silicon Germanium NPN SiGe High Freq

NESG2030M04 Data Sheet

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Part Number:
NESG2030M04
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Power Dissipation : 80 mW Mounting Style : SMD/SMT
Package / Case : SOT-343    

Description

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Packaging :
Mounting Style : SMD/SMT
Package / Case : SOT-343
Power Dissipation : 80 mW


Features:

• SiGe TECHNOLOGY: fT = 60 GHz Process
• LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz
• NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

8.0

VCBO
Collector to Base Voltage
V
2.0
VEBO
Emitter to Base Voltage
V
1.2
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
80
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 • 1.0 mm (t) glass epoxy substrate


Description

The NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz, it is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.

NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.




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