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NESG2107M33

Features: • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGESpecifications Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 13.0 V ...

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SeekIC No. : 004433553 Detail

NESG2107M33: Features: • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGESpecifications...

NESG2107M33 Data Sheet

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Part Number:
NESG2107M33
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE


Specifications

Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
13.0
V
Collector to Emitter Voltage
VCEO
5.0
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IG
100
mA
Total Power Dissipation
PtotNote
130
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB


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