NESG2021M16

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Packaging :
Mounting Style : SMD/SMT
Power Dissipation : 175 mW
Package / Case : M16


Features:

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY V_CEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: N_F = 0.9 dB at 2 GHz N_F = 1.3 dB at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: M_SG = 22.5 dB at 2 GHz
• LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	13.0
VCBO	Collector to Base Voltage	V	5.0
VEBO	Emitter to Base Voltage	V	1.5
IC	Collector Current	mA	35
PT2	Total Power Dissipation	mW	175
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.


Description

NEC's NESG2021M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.