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NES2427P-60

Features: • Push-pull type N-channel GaAs MES FET• VDS = 10.0 V operation• High output power: PO (1 dB) = 60 W TYP.• High linear gain: GL = 12.0 dB TYP.• High power added efficiency: hadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHzSpecificat...

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NES2427P-60: Features: • Push-pull type N-channel GaAs MES FET• VDS = 10.0 V operation• High output power: PO (1 dB) = 60 W TYP.• High linear gain: GL = 12.0 dB TYP.• High power add...

NES2427P-60 Data Sheet

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Part Number:
NES2427P-60
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Push-pull type N-channel GaAs MES FET
• VDS = 10.0 V operation
• High output power: PO (1 dB) = 60 W TYP.
• High linear gain: GL = 12.0 dB TYP.
• High power added efficiency: hadd = 35 % TYP. @ VDS = 10.0 V, IDset = 12.0 A (total), f = 2.50, 2.70 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
-7
V
Gate to Drain Voltage
VGDO
-18
V
Drain Current
ID
54
A
Gate Current
IG
360
mA
Total Power Dissipation
PtotNote
200
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
-65 to +175
°C



Description

The NES2427P-60 is a 60 W push-pull type GaAs MES FET designed for high power transmitter applications for MMDS, WLL repeater and base station systems. It is capable of delivering 60 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 2.4 to 2.7 GHz. The NES2427P-60 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity of NES2427P-60 are assured by NEC's stringent quality and control procedures.




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