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NES2427P-45

Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High output power: Pout = 45 W TYP.• High linear gain: GL = 11 dB TYP.• High power added efficiency: hadd = 41 % TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.70 GHzSpecifications Pa...

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NES2427P-45: Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High output power: Pout = 45 W TYP.• High linear gain: GL = 11 dB TYP.• High power added effi...

NES2427P-45 Data Sheet

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Part Number:
NES2427P-45
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • 15 Days
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Product Details

Description



Features:

• Push-pull type N-channel GaAs MES FET
• VDS = 12.0 V operation
• High output power: Pout = 45 W TYP.
• High linear gain: GL = 11 dB TYP.
• High power added efficiency: hadd = 41 % TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.70 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
19
V
Gate to Source Voltage
VGSO
-7
V
Gate to Drain Voltage
VGDO
-22
V
Drain Current
ID
24
A
Gate Current
IG
240
mA
Total Power Dissipation
PtotNote
165
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
-65 to +175
°C



Description

The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for WLL repeater and base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 2.4 to 2.7 GHz. The NES2427P-45 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity of NES2427P-45 are assured by NEC's stringent quality and control procedures.




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