Features: • High output power• High gain• High power added efficiency• Internally matched input• High reliabilitySpecificationsDrain to Source Voltage ... VDS 15 VGate to Source Voltage....VGS -7 VGate to Drain Voltage ....VGD-18 VDrain Current .......... ID 27 AGate ...
NES2527B-30: Features: • High output power• High gain• High power added efficiency• Internally matched input• High reliabilitySpecificationsDrain to Source Voltage ... VDS 15 VGate ...
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Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High ...
Features: • Push-pull type N-channel GaAs MES FET• VDS = 10.0 V operation• High ...
The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the NES2527B-30 uses PHS (Plated Heat Sink) technology.
The NES2527B-30 incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for surface stability.