NES2527B-30

Features: • High output power• High gain• High power added efficiency• Internally matched input• High reliabilitySpecificationsDrain to Source Voltage ... VDS 15 VGate to Source Voltage....VGS -7 VGate to Drain Voltage ....VGD-18 VDrain Current .......... ID 27 AGate ...

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SeekIC No. : 004433536 Detail

NES2527B-30: Features: • High output power• High gain• High power added efficiency• Internally matched input• High reliabilitySpecificationsDrain to Source Voltage ... VDS 15 VGate ...

floor Price/Ceiling Price

Part Number:
NES2527B-30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/9

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Product Details

Description



Features:

• High output power
• High gain
• High power added efficiency
• Internally matched input
• High reliability



Specifications

Drain to Source Voltage ... VDS           15                V
Gate to Source Voltage....VGS           -7                 V
Gate to Drain Voltage .... VGD          -18                V
Drain Current ..........  I          27                A
Gate Current ..........  I         180              mA
Total Power Dissipation .. PT(*)          110               W
Channel Temperature .... Tch           175              °C
Storage Temperature ....Tstg      -65 to +175      °C



Description

The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal input matching circuits are designed to optimize performance. The device has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the NES2527B-30 uses PHS (Plated Heat Sink) technology.

The NES2527B-30 incorporates WSi (tungsten silicide) gate for high reliability and SiO2 glassivation for surface stability.




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