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NESG2031M05

Transistors RF Silicon Germanium NPN SiGe High Freq

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SeekIC No. : 00221121 Detail

NESG2031M05: Transistors RF Silicon Germanium NPN SiGe High Freq

NESG2031M05 Data Sheet

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Part Number:
NESG2031M05
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Power Dissipation : 175 mW Mounting Style : SMD/SMT
Package / Case : M05    

Description

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Packaging :
Mounting Style : SMD/SMT
Power Dissipation : 175 mW
Package / Case : M05


Features:

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN: MSG= 21.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

13.0

VCBO
Collector to Base Voltage
V
5.0
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
175
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.


Description

NEC's NESG2031M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. NECsl ow profile, flat lead style M05 Package of NESG2031M05 provides high frequency performance for compact wireless designs.




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