Features: • LOW COST• HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP• LOW COLLECTOR TO BASE TIME CONSTANT: CC•r b'b = 5 ps TYP• LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYPSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collector to Emitter ...
NE944: Features: • LOW COST• HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP• LOW COLLECTOR TO BASE TIME CONSTANT: CC•r b'b = 5 ps TYP• LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF T...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
30 |
VCBO |
Collector to Base Voltage |
V |
15 |
VEBO |
Emitter to Base Voltage |
V |
3.0 |
IC |
Collector Current |
mA |
50 |
Tj |
Junction Temperature |
||
NE94432, NE94433 |
°C |
125 | |
NE94430 |
°C |
150 | |
TSTG |
Storage Temperature |
°C |
-55 to +150 |
The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs.
The NE944 features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range.