Transistors RF Bipolar Small Signal PNP High Frequency
NE97833: Transistors RF Bipolar Small Signal PNP High Frequency
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Configuration : | Single |
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
-20 |
VCBO |
Collector to Base Voltage |
V |
-12 |
VEBO |
Emitter to Base Voltage |
V |
-3 |
IC |
Collector Current |
mA |
-50 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +150 |
The NE97833 PNP silicon transistor is designed for ultrahigh speed current mode switching applications and microwave amplifiers up to 3.5 GHz. The NE97833 offers excellent performance and reliability at low cost.