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NESG2101M05

Transistors RF Silicon Germanium NPN SiGe High Freq

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SeekIC No. : 00221127 Detail

NESG2101M05: Transistors RF Silicon Germanium NPN SiGe High Freq

NESG2101M05 Data Sheet

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Part Number:
NESG2101M05
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Mounting Style :
Package / Case :
Packaging :


Features:

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE POWER GAIN: MSG= 17 dB at 2 GHz
• LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

13.0

VCBO
Collector to Base Voltage
V
5.0
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
100
PT2
Total Power Dissipation
mW
500
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 38 x 38 x 0.4 mm (t) glass epoxy substrate


Description

NEC's NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECslo w profile, flat lead style M05 Package of NESG2101M05 provides high frequency performance for compact wireless designs.




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