Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High output power: Pout = 140 W TYP.• High linear gain: GL = 11 dB TYP.• High power added efficiency: hadd = 43 % TYP. @ VDS = 12.0 V, IDset = 6.0 A (total), f = 2.20 GHzSpecifications P...
NES1823P-140: Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High output power: Pout = 140 W TYP.• High linear gain: GL = 11 dB TYP.• High power added eff...
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Features: · High output power· High gain· High power added efficiency· Internally matched input· H...
Parameter |
Symbol |
Ratings |
Unit |
Drain to Source Voltage |
VDS |
19 |
V |
Gate to Source Voltage |
VGSO |
-7 |
V |
Gate to Drain Voltage |
VGDO |
-22 |
V |
Drain Current |
ID |
76 |
A |
Gate Current |
IG |
440 |
mA |
Total Power Dissipation |
PtotNote |
270 |
W |
Channel Temperature |
Tch |
175 |
°C |
Storage Temperature |
Tstg |
-65 to +175 |
°C |
The NES1823P-140 is a 140 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 140 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. NES1823P-140's primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The NES1823P-140 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC's NES1823P-140 stringent quality and control procedures.