NES1821B-30 Selling Leads, Price trend, NES1821B-30 DataSheet download, circuit diagram from SeekIC.com

Features: · High output power· High gain· High power added efficiency· Internally matched input· High reliabilitySpecificationsDrain to Source Voltage. VDS 15 VGate to Source Voltage ..VGS 7 VGate to Drain Voltage ...VGD18 VDrain Current ......... ID 27 AGate Current......... IG 180 mATotal Power ...

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SeekIC No. : 004433528 Detail

NES1821B-30: Features: · High output power· High gain· High power added efficiency· Internally matched input· High reliabilitySpecificationsDrain to Source Voltage. VDS 15 VGate to Source Voltage ..VGS 7 VGate t...

NES1821B-30 Data Sheet

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Part Number:: NES1821B-30
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/20

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Recent History
What is this?

NES120 evaluate
Features: · DIN rail standard mounting: EN50022-3527.5 or 35215· Universal input: 85 ~ 265VAC cont...
NES150-24 evaluate
US $15.12 - 19.98 / Piece

Linear and Switching Power Supplies 156W 24V 6.5A
NES1823P-100 evaluate
Features: • Push-pull type N-channel GaAs MESFET• High Output Power : 100 W TYP.•...

Product Details

Description

Features:

· High output power
· High gain
· High power added efficiency
· Internally matched input
· High reliability

Specifications

Drain to Source Voltage. V_DS              15                 V
Gate to Source Voltage ..V_GS             7                 V
Gate to Drain Voltage ...V_GD            18                V
Drain Current ......... I_D            27                 A
Gate Current......... I_G              180               mA
Total Power Dissipation .P_T(*)             110                W
Channel Temperature ..   T_ch             175                °C
Storage Temperature .. T_stg    65 to +175          °C

Description

The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed to optimize performance. The NES1821B-30 has a 0.8 mm gate length for increased linear gain. To reduce thermal resistance, the device uses PHS (Plated Heat Sink) technology.

The NES1821B-30 incorporates WSi (tungsten silicide) gate or high reliability and SiO2 glassivation for urface stability.

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NES1821B-30

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