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NES1823P-100

Features: • Push-pull type N-channel GaAs MESFET• High Output Power : 100 W TYP.• High Linear Gain : 11.0 dB TYP.• High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage ...

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NES1823P-100: Features: • Push-pull type N-channel GaAs MESFET• High Output Power : 100 W TYP.• High Linear Gain : 11.0 dB TYP.• High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, ...

NES1823P-100 Data Sheet

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Part Number:
NES1823P-100
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Push-pull type N-channel GaAs MESFET
• High Output Power : 100 W TYP.
• High Linear Gain : 11.0 dB TYP.
• High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
-7
V
Drain Current
ID
76
A
Gate Current
IG
440
mA
Total Power Dissipation
PT
220Note
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
-65 to +175
°C



Description

The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. NES1823P-100's primary band is 1.8 to 2.3 GHz with different maching.
The NES1823P-100 employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride assivation for superior performance, thermal characteristics, and reliability. eliability and performance uniformity are assured by NEC's NES1823P-100 stringent quality and control procedures.




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