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NE960R5

Features: • High Output Power : Po (1 dB) = +27.5 dBm TYP.• High Linear Gain : 9.0 dB TYP.• High Power Added Efficiency: 30 % TYP. @VDS = 9 V, IDset = 180 mA, f = 14.5 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V ...

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NE960R5: Features: • High Output Power : Po (1 dB) = +27.5 dBm TYP.• High Linear Gain : 9.0 dB TYP.• High Power Added Efficiency: 30 % TYP. @VDS = 9 V, IDset = 180 mA, f = 14.5 GHzSpecifica...

NE960R5 Data Sheet

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Part Number:
NE960R5
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power : Po (1 dB) = +27.5 dBm TYP.
• High Linear Gain : 9.0 dB TYP.
• High Power Added Efficiency: 30 % TYP. @VDS = 9 V, IDset = 180 mA, f = 14.5 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7(-9Note 1)
V
Drain Current
ID
0.7
A
Gate Forward Current
IGF
+5.0
mA
Gate Reverse Current
IGR
5.0
mA
Total Power Dissipation
PT
5.0 (4.2Note 2)
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C

Notes 1. NE962R575
          2. NE961R500


Description

The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. NE960R5 is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc.

The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.




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