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NE960R2

Features: • High Output Power : Po (1 dB) = +25.0 dBm TYP.• High Linear Gain : 10.0 dB TYP.• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V ...

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NE960R2: Features: • High Output Power : Po (1 dB) = +25.0 dBm TYP.• High Linear Gain : 10.0 dB TYP.• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHzSpecifica...

NE960R2 Data Sheet

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Part Number:
NE960R2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Output Power : Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain : 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7
V
Drain Current
ID
0.35
A
Gate Forward Current
IGF
+2.5
mA
Gate Reverse Current
IGR
2.5
mA
Total Power Dissipation
PT
2.5 (2.1Note)
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C



Description

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.




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