Position: Home  > All Categories> Integrated Circuits (ICs) > NE960R2

NE960R2

Features: • High Output Power : Po (1 dB) = +25.0 dBm TYP.• High Linear Gain : 10.0 dB TYP.• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHzSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V ...

product image

NE960R2 Picture
See larger image
SeekIC No. : 004433496 Detail

NE960R2: Features: • High Output Power : Po (1 dB) = +25.0 dBm TYP.• High Linear Gain : 10.0 dB TYP.• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHzSpecifica...

NE960R2 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NE960R2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• High Output Power : Po (1 dB) = +25.0 dBm TYP.
• High Linear Gain : 10.0 dB TYP.
• High Power Added Efficiency: 35 % TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGSO
7
V
Drain Current
ID
0.35
A
Gate Forward Current
IGF
+2.5
mA
Gate Reverse Current
IGR
2.5
mA
Total Power Dissipation
PT
2.5 (2.1Note)
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C



Description

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Optoelectronics
SFH7770
TLP423J
Crystals and Oscillators
WT325BI0030.000000
2SB49
Kits
IT243
UVSC-110-4E1
View more