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NEL2301

DescriptionThe NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliability.A variety of hermetic packages and a plastic package of NEL2301are available for wide band amplifi...

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SeekIC No. : 004433515 Detail

NEL2301: DescriptionThe NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliabilit...

NEL2301 Data Sheet

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Part Number:
NEL2301
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Description



Description

The NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliability.A variety of hermetic packages and a plastic package of NEL2301 are available for wide band amplifier and oscillator applications.

Features of the NEL2301 are:(1)high linear power:P1dB=2.8w; (2)high gain:G1dB=6.5dB; (3)wide bandwidth; (4)hermetic and low cost plastic packages ; (5)common emitter.

The absolute maximum ratings of the NEL2301 can be summarized as:(1)VCBO collector to base voltage:45V; (2)VCEO collector to emitter voltage:20V; (3)VEBO emitter to base voltage:3V; (4)IC collector current :0.6A; (5)TJ junction temperature:-65 to 200; (6)TSTG storage temperature:-65 to 200; (7)TSCR soldering temperature:230 for 10 sec..

If you want to know more information about NEL2301 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .




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