DescriptionThe NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliability.A variety of hermetic packages and a plastic package of NEL2301are available for wide band amplifi...
NEL2301: DescriptionThe NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliabilit...
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Features: · High Linear Power and Gain· Low Internal Modulation Distortion· High Reliability Gold ...
Features: · High Linear Power and Gain· Low Internal Modulation Distortion· High Reliability Gold ...
Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Met...
The NEL2301 this L-band linear power transistor series incorporates a Pt-Si/Ti/Pt/Au metallization system,emitter ballasting and silicon nitride passivation for perfoemance and reliability.A variety of hermetic packages and a plastic package of NEL2301 are available for wide band amplifier and oscillator applications.
Features of the NEL2301 are:(1)high linear power:P1dB=2.8w; (2)high gain:G1dB=6.5dB; (3)wide bandwidth; (4)hermetic and low cost plastic packages ; (5)common emitter.
The absolute maximum ratings of the NEL2301 can be summarized as:(1)VCBO collector to base voltage:45V; (2)VCEO collector to emitter voltage:20V; (3)VEBO emitter to base voltage:3V; (4)IC collector current :0.6A; (5)TJ junction temperature:-65 to 200; (6)TSTG storage temperature:-65 to 200; (7)TSCR soldering temperature:230 for 10 sec..
If you want to know more information about NEL2301 such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .