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NEL200101-24

Features: · High Linear Power and Gain· Low Internal Modulation Distortion· High Reliability Gold Metallization· Emitter Ballasting· 24 V OperationSpecifications PARAMETER SYMBOL SPECIFIED CONDITION RATINGS UNIT Collector to Base Voltage VCBO 45 V Collector to E...

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NEL200101-24: Features: · High Linear Power and Gain· Low Internal Modulation Distortion· High Reliability Gold Metallization· Emitter Ballasting· 24 V OperationSpecifications PARAMETER SYMBOL SPECIFIE...

NEL200101-24 Data Sheet

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Part Number:
NEL200101-24
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· High Linear Power and Gain
· Low Internal Modulation Distortion
· High Reliability Gold Metallization
· Emitter Ballasting
· 24 V Operation


Specifications

PARAMETER
SYMBOL
SPECIFIED CONDITION
RATINGS
UNIT
Collector to Base Voltage
VCBO
45
V
Collector to Emitter Voltage
VCER
R = 10
30
V
Emitter to Base Voltage
VEBO
3
V
Collector to Emitter Voltage
VCEO
18
V
Collector Current
IC
0.5
A
Power Dissipation
PT
7.4
W
Thermal Resistance
Rth(j-c)
23.6
°C/W
Junction Temperature
Tj
200
°C
Storage Temperature
Tstg
65 to 150
°C



Description

NEL2001012-24 of NPN epitaxial microwave power transistors s designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
NEL200101-24 incorporates emitter ballast resistors, gold metallizations and ffers a high degree of reliability.


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