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NEL2012F03-24

Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Metalization· mitter Ballasting· 4 V OperationApplication· igital Cellular : PCN/PCS etc.· igital Cordless : PHS etc.Specifications PARAMETER SYMBOL SPECIFIED CONDITION RATINGS UNIT C...

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NEL2012F03-24: Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Metalization· mitter Ballasting· 4 V OperationApplication· igital Cellular : PCN/PCS etc.· igital Cordl...

NEL2012F03-24 Data Sheet

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Part Number:
NEL2012F03-24
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· igh Linear Power and Gain
· ow Internal Modulation Distortion
· igh Reliability Gold Metalization
· mitter Ballasting
· 4 V Operation


Application

· igital Cellular : PCN/PCS etc.
· igital Cordless : PHS etc.


Specifications

PARAMETER
SYMBOL
SPECIFIED CONDITION
RATINGS
UNIT
Collector to Base Voltage
VCBO
45
V
Collector to Emitter Voltage
VCER
R = 10
30
V
Emitter to Base Voltage
VEBO
3
V
Collector to Emitter Voltage
VCEO
18
V
Collector Current
IC
4
A
Power Dissipation
PT
41.5
W
Thermal Resistance
Rth(j-c)
4.2
°C/W
Junction Temperature
Tj
200
°C
Storage Temperature
Tstg
65 to 150
°C



Description

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ HS base station applications. NEL2012F03-24 is corporate emitter ballast resistors, gold metalizations and offers a high degree of eliability.


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