NEL2012F03-24 Selling Leads, Price trend, NEL2012F03-24 DataSheet download, circuit diagram from SeekIC.com

Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Metalization· mitter Ballasting· 4 V OperationApplication· igital Cellular : PCN/PCS etc.· igital Cordless : PHS etc.Specifications PARAMETER SYMBOL SPECIFIED CONDITION RATINGS UNIT C...

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SeekIC No. : 004433513 Detail

NEL2012F03-24: Features: · igh Linear Power and Gain· ow Internal Modulation Distortion· igh Reliability Gold Metalization· mitter Ballasting· 4 V OperationApplication· igital Cellular : PCN/PCS etc.· igital Cordl...

NEL2012F03-24 Data Sheet

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Part Number:: NEL2012F03-24
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/24

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Recent History
What is this?

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Product Details

Description

Features:

· igh Linear Power and Gain
· ow Internal Modulation Distortion
· igh Reliability Gold Metalization
· mitter Ballasting
· 4 V Operation

Application

· igital Cellular : PCN/PCS etc.
· igital Cordless : PHS etc.

Specifications

PARAMETER	SYMBOL	SPECIFIED CONDITION	RATINGS	UNIT
Collector to Base Voltage	V_CBO		45	V
Collector to Emitter Voltage	V_CER	R = 10	30	V
Emitter to Base Voltage	V_EBO		3	V
Collector to Emitter Voltage	V_CEO		18	V
Collector Current	I_C		4	A
Power Dissipation	P_T		41.5	W
Thermal Resistance	R_th(j-c)		4.2	°C/W
Junction Temperature	T_j		200	°C
Storage Temperature	T_stg		65 to 150	°C

Description

The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ HS base station applications. NEL2012F03-24 is corporate emitter ballast resistors, gold metalizations and offers a high degree of eliability.

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NEL2012F03-24

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