Position: Home  > All Categories> Integrated Circuits (ICs) > NESG2101M16

NESG2101M16

Transistors RF Silicon Germanium RO 551-NESG2101M16-A

product image

NESG2101M16 Picture
See larger image
SeekIC No. : 00221123 Detail

NESG2101M16: Transistors RF Silicon Germanium RO 551-NESG2101M16-A

NESG2101M16 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NESG2101M16
Mfg:
CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/9

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Power Dissipation : 130 mW Mounting Style : SMD/SMT
Package / Case : M16    

Description

Emitter- Base Voltage VEBO :
Continuous Collector Current :
Packaging :
Mounting Style : SMD/SMT
Power Dissipation : 130 mW
Package / Case : M16


Features:

• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
• HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz
• LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz
• HIGH MAXIMUM STABLE POWER GAIN: MSG= 17 dB at 2 GHz
• LOW PROFILE M16 PACKAGE:6-pin lead-less minimold


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

13.0

VCBO
Collector to Base Voltage
V
5.0
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
100
PT2
Total Power Dissipation
mW
190
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Mounted on 1.08 cm2 x 1.0 mm (t) glass epoxy PCB.


Description

NEC's NESG2101M16 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Undefined Category
VI-B63-IU
X27 589
Cables, Wires
821-0814-a
415-0100-150
Integrated Circuits (ICs)
TA8435H
1MB12-140
Audio Products
HUC1002
WM-64CT
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more