NE856M03

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• LOW NOISE FIGURE: N_F = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT: I_CMAX = 100 mA


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	20
VCBO	Collector to Base Voltage	V	12
VEBO	Emitter to Base Voltage	V	3
IC	Collector Current	mA	100
PT	Total Power Dissipation	mW	125
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE856M13 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles.