NE85001

Features:

• Class A operation
• High power output
• High reliability


Specifications

Drain to Source Voltage.. V_DSX                 15              V
Gate to Drain Voltage ..   V_GDX               18              V
Gate to Source Voltage..  V_GSX               12              V
Total Power Disipation(*)..   P_T                6.0              W
Drain Current ..........I_D               1.12              A
Gate Current .......... I_G                6.0              mA
Channel Temperature .... T_ch               175             °C
Storage Temperature ....T_stg        65 to 175         °C


Description

The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.

NE8500100 is the two-cells recessed gate chip used in '99' package.

The NE85001 incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device has a PHS. (Plated Heat Sink)

NEC's strigent quality assurance and test of NE85001 procedures assure the highest reliability and performance.