Transistors RF GaAs 2W C Band MESFET
NE8500295-4: Transistors RF GaAs 2W C Band MESFET
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Technology Type : | MESFET | Frequency : | 3.5 GHz to 4.5 GHz |
Gain : | 10.5 dB | Forward Transconductance gFS (Max / Min) : | 600 mS |
Drain Source Voltage VDS : | 15 V | Gate-Source Breakdown Voltage : | - 12 V |
Continuous Drain Current : | 1.9 A | Maximum Operating Temperature : | + 175 C |
Power Dissipation : | 13 W | Mounting Style : | SMD/SMT |
Package / Case : | CHIP |