NE856M13

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Continuous Collector Current : 0.1 A
Package / Case : M13
Power Dissipation : 140 mW


Features:

• NEW MINIATURE M13 PACKAGE:
   Small transistor outline
  1.0 X 0.5 X 0.5 mm
  Low profile / 0.50 mm package height
  Flat lead style for better RF performance
• LOW NOISE FIGURE: N_F = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT: I_{C MAX} = 100 mA


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCEO	Collector to Emitter Voltage	V	20
VCBO	Collector to Base Voltage	V	12
VEBO	Emitter to Base Voltage	V	3
IC	Collector Current	mA	100
PT2	Total Power Dissipation	mW	140
Tj	Junction Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.


Description

The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE856M13 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles.