Features: • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS: VCEO (ABSOLUTE MAXIMUM RATINGS) = 5.0 V• 3-PIN SUPER MINIMOLD (19) PACKAGESpecific...
NESG204619: Features: • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.0 dB TYP. @ VCE = 1 V, IC = 3 mA, F = 2 GHZ• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE T...
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Parameter |
Symbol |
Ratings |
Unit |
Collector to Base Voltage |
VCBO |
13 |
V |
Collector to Emitter Voltage |
VCEO |
6 |
V |
Emitter to Base Voltage |
VEBO |
1.5 |
V |
Collector Current |
IG |
40 |
mA |
Total Power Dissipation |
PtotNote |
200 |
mW |
Junction Temperature |
Tj |
150 |
°C |
Storage Temperature |
Tstg |
-65 to +150 |
°C |