NE88900

The NE889 series of PNP silicon transistors is designed for ultra high speed current mode switching applications and microwave amplifiers up to 2GHz.The NE889 is available in serveral package styles and in chip from (NE88900).The NE88935 is an economical metal ceramic stripline version which features low parasitic elements and is ideal for low cost hybird circuits.Reliability is assured by NEC's stringent production controls,which are patterned after MIL-S-19500 and Pt/Si-Ti-Pt-Au metallization.

The NE889 has 5 features.The first one is PNP complement to NE327.The second one is high gain bandwidth product is fT=4GHz.The third one is hugh gain is 18 dB at 500MHz.The fourth one is low noise is 2 dB at 500MHz.The fifth one is reliable is gold metallization and rugged packages.

The NE889 has some absolute maximum ratings (TA=25).When symbol is VCBO,the parameter is collector to base voltage,the units is V,the rating is -20.When symbol is VCEO,the parameter is collector to emitter voltage,the units is V,the rating is -12. When symbol is VEBO,the parameter is emitter to base voltage,the units is V,the rating is -3.When symbol is IC,the parameter is collector current,the units is mA,the rating is -50.When symbol is TJ,the parameter is junction temperature,the units is ,the rating is 200.When symbol is TSTG,the parameter is storage temperature,the units is ,the rating is -65 to +200.