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NESG2046M33

Features: • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PAC...

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NESG2046M33: Features: • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz• HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE T...

NESG2046M33 Data Sheet

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Part Number:
NESG2046M33
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS:
   NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• HIGH BREAKDOWN VOLTAGE TECHNOLOGY
   FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V
• 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
13
V
Gate to Source Voltage
VGSO
5
V
Gate to Drain Voltage
VGDO
1.5
V
Drain Current
ID
40
A
Gate Current
IG
130
mA
Total Power Dissipation
PtotNote
150
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-65 to +175
°C



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