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NES1823P-45

Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High output power: Pout = 45 W TYP.• High linear gain: GL = 12 dB TYP.• High power added efficiency: hadd = 45 % TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.20 GHzSpecifications Pa...

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NES1823P-45: Features: • Push-pull type N-channel GaAs MES FET• VDS = 12.0 V operation• High output power: Pout = 45 W TYP.• High linear gain: GL = 12 dB TYP.• High power added effi...

NES1823P-45 Data Sheet

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Part Number:
NES1823P-45
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Push-pull type N-channel GaAs MES FET
• VDS = 12.0 V operation
• High output power: Pout = 45 W TYP.
• High linear gain: GL = 12 dB TYP.
• High power added efficiency: hadd = 45 % TYP. @ VDS = 12.0 V, IDset = 4.0 A (total), f = 2.20 GHz


Specifications

Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
19
V
Gate to Source Voltage
VGSO
-7
V
Gate to Drain Voltage
VGDO
-22
V
Drain Current
ID
24
A
Gate Current
IG
240
mA
Total Power Dissipation
PtotNote
165
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
-65 to +175
°C



Description

The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain, high efficiency and excellent distortion under the condition of 12 V operation. NES1823P-45's primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz. The NES1823P-45 employs 0.9 mm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC's NES1823P-45 stringent quality and control procedures.




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