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Index N : NE856M02,NE8560,NE576,
NE856M02
Mfg:NEC D/C:00+ Vendor:Other Category:Other
The NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. NE856M02 offers excellent performance and reliability at...NE8560
Vendor:Other Category:Other
NEC's NE8560 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellen...NE856
Vendor:Other Category:Other
NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent...NE851M33
Vendor:Other Category:Other
NE851M13
Vendor:Other Category:Other
NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13...NE851M03
Vendor:Other Category:Other
NEC's NE851M03 transistor is designed for oscillator applications up to 3 GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's low profile/flat lead style "M03" pa...NE850R599A
Mfg:NEC Vendor:Other Category:Other
The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The NE850R599A has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equ...NE85002
Vendor:Other Category:Other
The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.NE8500200 is the six-cel...NE85001
Vendor:Other Category:Other
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on.NE8500100 is the two-cells recessed gate chip used in '99' package.The NE85001 incorporates ...NE83Q93
Mfg:PHILPS Pack:SMD D/C:07/08+ Vendor:Other Category:Other
The NE83Q93 is a low power coaxial transceiver interface (CTI) for Ethernet (10base5) and Thin Ethernet (10base2) local area networks. The CTI is connected between the coaxial cable and the Data Terminal Equipment (DTE) ...NE83Q92
Mfg:PHILIPS Pack:SMD D/C:250 Vendor:Other Category:Other
The NE83Q92 is a low power BiCMOS coaxial transceiver interface (CTI) for Ethernet (10base5) and Thin Ethernet (10base2) local area networks. The CTI NE83Q92 is connected between the coaxial cable and the Data Terminal E...NE83C92
Vendor:Other Category:Other
The NE83C92 is a low power BiCMOS coaxial transceiver interface (CTI) for Ethernet (10base5) and Thin Etherne(10base2) local area networks. The CTI NE83C92 is connected between the coaxial cable and the Data Terminal Equ...NE8392C
Vendor:Other Category:Other
The NE8392C Coaxial Transceiver Interface (CTI) is a bipolar coaxial line driver/receiver for Ethernet (10base5) and Thin Ethernet (10base2) local area networks. The CTI NE8392C is connected between the coaxial cable and...NE76184A
Mfg:500 Pack:NEC D/C:02+ Vendor:Other Category:Other
NE76184A is a N-channel GaAs MES FET housed in ceramic package. The NE76184A is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated ga...NE76118
Vendor:Other Category:Other
NE76118 is a n-channel GaAs MES FET housed in MOLD package.NE76084S
Vendor:Other Category:Other
The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. The device features...NE76084
Mfg:N/A Pack:N/A D/C:N/A Vendor:Other Category:Other
NE76038
Mfg:NEC Pack:N/A D/C:N/A Vendor:Other Category:Other
NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low nois...NE76000
Vendor:Other Category:Other
The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature...NE734
Vendor:Other Category:Other
The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC'...NE722S01-T1B1
Vendor:Other Category:Other
The NE722S01-T1B1 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion i...NE722S01
Vendor:Other Category:Other
NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion imp...NE72218
Vendor:Other Category:Other
NE721S01
Vendor:Other Category:Other
The NE721S01 is a low cost 0.8 mm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications.Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operati...NE720
Vendor:Other Category:Other
The NE720 is a kind of low cost 1.0 recessed GaAs FET. It provides a low noise figure and high gain through 8 GHz. It is designed for consumer applications. The device is available as a chip (NE72000) and in two hermetic...NE71300
Vendor:Other Category:Other
The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scra...NE713
Vendor:Other Category:Other
NE710
Vendor:Other Category:Other
The NE710 series features a low noise figure and high assoclated gain thru K-band by employing a recassed 0.3 micron gate and triple epitaxial technology. Features of the NE710 are:(1)very high fmax:90GHz; (2)low noise ...NE699M01
Vendor:Other Category:Other
The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT- 363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to ...NE698M01
Vendor:Other Category:Other
The NE698M01 is an NPN high frequency silicon epitaxial transistor (NE686) encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to c...NE696M01
Vendor:Other Category:Other
NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT- 363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared t...NE69039
Vendor:Other Category:Other
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ wi...NE68939
Vendor:Other Category:Other
The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ wi...NE688M23
Vendor:Other Category:Other
The NE688M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/...NE688M13
Vendor:Other Category:Other
The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/...NE688M03
Vendor:Other Category:Other
The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/...NE688
Vendor:Other Category:Other
The NE688 series of NPN epitaxial silicon transistors are designed for low cost amplifier and oscillator applications. Low noise figures, high gain and high current capability equate to wide dynamic range and excellent l...NE687M33
Vendor:Other Category:Other
NE687M23
Vendor:Other Category:Other
The NE687M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio a...NE687M13
Vendor:Other Category:Other
NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio...NE687M03
Vendor:Other Category:Other
NEC's NE687M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio...NE68719
Mfg:NEC Pack:SOT-23 D/C:07+ Vendor:Other Category:Other
NEC's NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applicat...NE6870
Vendor:Other Category:Other
The NE6870 each The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an idealchoice for portable wire...NE687
Vendor:Other Category:Other
The NE687 series of NPN epitaxial silicon transistors are designed for low cost, low noise applications. Excellent performance at low voltage/low current makes this series an ideal choice for portable wireless applicatio...NE686
Vendor:Other Category:Other
The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillatorapplications. Its high fT make it an excellent choice for portable wireless applications up to 5 GHz...NE685M33
Vendor:Other Category:Other
NE685M23
Vendor:Other Category:Other
The NE685M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio a...NE685M13
Vendor:Other Category:Other
NEC's NE685M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for low voltage/low current designs for portable wireless communications and cellular radio appl...NE685M03
Vendor:Other Category:Other
The NE685M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio a...NE685
Vendor:Other Category:Other
NEC's NE685 family of high frequency, low cost, surface mount devices are well suited for portable wireless communications and cellular radio applications.The NE685 series of high fT (12 GHz) devices is suitable for very...NE681M23
Vendor:Other Category:Other
The NE681M23 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/ ceramic substrate style "M23" package of NE681M23 is ideal for today's portable wireless applications...NE681M13
Vendor:Other Category:Other
NEC's NE681M13 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE681M13 is a...NE681M03
Vendor:Other Category:Other
NEC's NE681M03 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE681M03 is a...NE681
Vendor:Other Category:Other
NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The ...NE680M03
Vendor:Other Category:Other
The NE680M03 transistor is designed for low noise, high gain, and low cost applications. This high fT part is ideal for low voltage/low current applications. NEC's new low profile/flat lead style "M03" package is ideal f...NE680
Vendor:Other Category:Other
NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also ...NE678M04
Vendor:Other Category:Other
The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, it is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low cu...NE677M04
Vendor:Other Category:Other
NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, it is usable in applications from 100 MHz to 3 GHz. It provides P1dB of 15 dBm, even with low voltage and low current, m...NE67483B
Vendor:Other Category:Other
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is...NE67400
Vendor:Other Category:Other
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is...NE66719
Vendor:Other Category:Other
NEC's NE66719 is fabricated using NEC's UHS0 25 GHz fT wafer process. This device is ideal for oscillator or low noise amplifier applications at 2 GHz and above.NE664M04
Vendor:Other Category:Other
NEC's NE664M04 is fabricated using NEC's state-of-the-art UHS0 25 GHz fT wafer process. With a transition frequency of 20 GHz, it is usable in applications from 100 MHz to over 3 GHz. The NE664M04 provides P1dB of 26 dBm...NE663M04
Vendor:Other Category:Other
NEC's NE663M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 19 GHz it is usable in applications from 100 MHz to 5 GHz. The NE663M04 provides excellent low voltage/low cur...NE662M16
Vendor:Other Category:Other
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz, it is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/lo...NE662M04
Vendor:Other Category:Other
The NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz, it is usable in applications from 100 MHz to 10 GHz. The NE662M04 provides excellent low voltage/low cur...NE661M04-T2
Vendor:Other Category:Other
The NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT,LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD. Features of the NE661M04-T2 are:(1)Low noise and high gain with low collect...NE661M04
Vendor:Other Category:Other
NEC's NE661M04 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz, it is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low c...NE651R479A
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. NE651R479A is capable of delivering 0.4 W of output power (CW) with high line...NE6510379A
Vendor:Other Category:Other
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems. NE6510379A is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high lin...NE6510179A
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM,WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. NE6510179A is capable of delivering 1.8 ...NE650R479A
Mfg:N/A Pack:N/A D/C:N/A Vendor:Other Category:Other
The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. NE650R479A is capable of delivering 0.4 watt of output power (CW) with ...NE650R279A
Vendor:Other Category:Other
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. NE650R279A is capable of delivering 0.2 watt of output power (CW) with ...NE6501077
Mfg:NEC Pack:00+ D/C:N/A Vendor:Other Category:Other
The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.To reduce thermal resistance, the NE6501077 has a PHS (Plated Heat Sink) structure.NE650103M
Vendor:Other Category:Other
NEC's NE650103M is a 10 W GaAs MESFET designed for PCS, W-CDMA, WLL transmitter applications. NE650103M is capable of delivering 10 Watts of output power with high linear gain, high efficiency and excellent linearity. Re...NE6500496
Vendor:Other Category:Other
The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.To reduce thermal resistance, the NE6500496 has a PHS (Plated Heat Sink) structure.NE6500379A
Vendor:Other Category:Other
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. NE6500379A is capable of delivering 3 watt of output power (CW) with high l...NE64700
Vendor:Other Category:Other
The ASI NE64700 is a bipolar transistor Designed for low noise applications at VHF, UFH and microwave frequencies up to 12 GHz.NE64535
Mfg:NEC Pack:SOP D/C:91+ Vendor:Other Category:Other
The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.NE645
Vendor:Other Category:Other
The NE645 is a monolithic audio noise reduction circuit designed as a direct replacement device for it in dolby b-type noise reductino systems.The NE645 is used to reduce the level of backaground noise introduced during ...NE605
Vendor:Other Category:Other
The NE605 is a high performance monolithic low-power FMIF system incorporating a mixer/oscillator,two limiting intermediate frequency amplifiers,quactrature detector,muting,logarithmic received signal strength indicator(...NE602A
Vendor:Other Category:Other
The NE602A each is a low-power VHF monolithic double-balanced mixer with input amplifier,on-board oscillator,and voltage regulator.It is intended for high performance,low power communication systems.The guaranteed parame...NE600
Vendor:Other Category:Other
The NE600 is a combined low noise amplifier(LNA)and mixer desiged for high-performance low-power communication systems from 800-1200MHz.The low-noise preamplifer has a 2dB noise figure at 900MHz with 16dB gain and an IM3...NE594
Mfg:DIP Pack:. D/C:03+ Vendor:Other Category:Other
The NE/SA594 is a display driver interface for vacuum fluorescent displays. The NE/SA594 is comprised of 8 drivers and a bias network, and is capable of driving the digits and/or segments of most vacuum fluorescent displ...NE592
Mfg:NA Pack:DIP Vendor:Other Category:Other
The NE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains from 400 to 0 with one external resistor. The inp...NE591
Mfg:NE D/C:DIP Vendor:Other Category:Other
The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The NE590/591 have eight Darlington power outputs, each capable of 250mA load current. The o...NE5900
Mfg:PHILIPS D/C:04+ Vendor:Other Category:Other
The NE5900 call progress decoder (CPD) is a low cost, low power CMOS integrated circuit designed to interface with a microprocessor-controlled smart telephone capable of making preprogrammed telephone calls. The call pr...NE590
Mfg:PHILIPS Pack:DIP D/C:4000 Vendor:Other Category:Other
The NE590/591 addressable peripheral drivers are high current latched drivers, similar in function to the 9334 address decoder. The NE590/591 have eight Darlington power outputs, each capable of 250mA load current. The o...NE587
Vendor:Other Category:Other
The NE587 is a latch/decoder/driver for 7-segment common anode LED displays. The NE587 has a programmable current output up to 50mA which is essentially independent of output voltage, power supply voltage, and temperat...NE58219
Vendor:Other Category:Other
NEC's NE58219 is a low supply voltage transistor designed for UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package makes this device ideally suited for high density surface mount assembly.NE57814
Vendor:Other Category:Other
The NE57814 is designed to provide power for termination of a DDR memory bus. It significantly reduces parts count, board space, and overall system cost over previous switching solutions. The NE57814 has an independent p...NE57811
Mfg:PHILIPS Pack:T0263 D/C:04+ Vendor:Other Category:Other
The NE57811 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions.The NE57811...NE57810
Vendor:Other Category:Other
The NE57810 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions.The NE57810...NE577
Vendor:Other Category:Other
The NE577 is a kind of unity gain level programmable compandor designed for low power applications. NE577 is internally configured as an expandor and a compressor to minimize external component count. It is available in ...NE57611
Vendor:Other Category:Other
The NE57611 is a one-cell, Li-ion battery charger controller which includes constant-current and constant voltage charging, a precise charge termination, and precharging of undervoltage cells.NE57611 contains the minimum...NE57610
Vendor:Other Category:Other
The NE57610 is a one- or two-cell, Li-ion battery charger controller which includes: constant-current and constant voltage charging, a precise charge termination, pre-charging of undervoltage cells, overcharge timer, and...NE57607
Vendor:Other Category:Other
The NE57607 is a family of 2-cell Li-ion protection ICs. Its over- and under-voltage accuracy is trimmed to within ±25 mV (5%) and is available to match the requirements of all lithium-ion cells manufactured in the marke...NE57606
Vendor:Other Category:Other
The NE57606 is a redundant overcharge detection IC for use within 2-4 cell Li-ion battery packs. It detects the voltage of each Li-ion cell and issues an overcharge signal which then can be used to alert the portable hos...NE57605
Vendor:Other Category:Other
The NE57605 is a 3-4-cell Li-ion protection IC. Its over- and under-voltage accuracy is trimmed to within ±25 mV (5%), and is available to match the requirements of all lithium-ion cells manufactured in the market today....NE57600
Vendor:Other Category:Other
The NE57600 series is a family of small, high-precision lithium-ion battery protection devices that provide protection against the damaging effects of overcharging, overdischarging, short circuit, and excessive current c...NE576
Vendor:Other Category:Other
The NE576 is a kind of unity gain level programmable compandor designed for low power applications. It is internally configured as an expandor and a compressor to minimize external component count. It is available in a 1...