Features: • NEW M03 PACKAGE:• Smallest transistor outline package available• Low profile/0.59 mm package height• Flat lead style for better RF performance• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz• LOW NOISE FIGURE: NF = 1.9 dB at 2 GHzSpecifications SYMBO...
NE680M03: Features: • NEW M03 PACKAGE:• Smallest transistor outline package available• Low profile/0.59 mm package height• Flat lead style for better RF performance• HIGH GAIN BA...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
20 |
VCBO |
Collector to Base Voltage |
V |
10 |
VEBO |
Emitter to Base Voltage |
V |
1.5 |
IC |
Collector Current |
mA |
35 |
PT |
Total Power Dissipation |
mW |
125 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
The NE680M03 transistor is designed for low noise, high gain, and low cost applications. This high fT part is ideal for low voltage/low current applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE680M03 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles.