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NE680

Features: • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz• LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz• HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz• EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCESpecifications SYMBOLS PARAMETERS UNITS RATINGS ...

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NE680: Features: • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz• LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz• HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz• EXCELLENT LOW...

NE680 Data Sheet

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Part Number:
NE680
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz
• LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz
• HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz
• EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V
20
VCBO
Collector to Base Voltage
V
10
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
35
Tj
Operating Junction Temperature
°C
1502
TSTG
Storage Temperature
°C
-65 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Maximum TJ for the NE68035 is 200°C.


Description

NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. Its high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series.




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