NE6510179A

Noise Figure :
Forward Transconductance gFS (Max / Min) :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 10 dB
Frequency : 1.9 GHz
Drain Source Voltage VDS : 8 V
Gate-Source Breakdown Voltage : - 4 V
Package / Case : 79A
Continuous Drain Current : 2.8 A
Power Dissipation : 15 W


Features:

• LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel
• USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS
• HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE: 5°C/W


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VDS	Drain to Supply Voltage	V	8
VGS	Gate to Source Voltage	V	-4
IDS	Drain Current	A	2.8
IGS	Gate Current (IGF, IGR)	mA	±25
PT	Total Power Dissipation	W	15
TCH	Channel Temperature	°C	150
TSTG	Storage Temperature	°C	-65 to +125

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. NE6510179A is capable of delivering 1.8 watts of output
power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures.