Transistors RF GaAs For NE6500379A 2.6G
NE6500379A-EVPW26: Transistors RF GaAs For NE6500379A 2.6G
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Technology Type : | MESFET | Frequency : | 1.9 GHz | ||
Gain : | 10 dB | Drain Source Voltage VDS : | 15 V | ||
Gate-Source Breakdown Voltage : | - 7 V | Continuous Drain Current : | 4.5 A | ||
Maximum Operating Temperature : | + 150 C | Power Dissipation : | 21 W | ||
Mounting Style : | SMD/SMT | Package / Case : | 79A |