NE6500496

Noise Figure :
Mounting Style : SMD/SMT
Drain Source Voltage VDS : 15 V
Gain : 11.5 dB
Technology Type : MESFET
Frequency : 2.3 GHz
Maximum Operating Temperature : + 175 C
Gate-Source Breakdown Voltage : - 12 V
Forward Transconductance gFS (Max / Min) : 1.3 S
Continuous Drain Current : 3.5 A
Power Dissipation : 25 W
Package / Case : Outline96


Features:

• Class A operation
• High output power: 36 dBm (typ)
• High gain: 11.5 dB (typ)
• High power added efficiency: 45 % (typ)
• Hermetically sealed ceramic package


Specifications

Drain to Source Voltage .. V_DSX                 15               V
Gate to Drain Voltage ... V_GDX               18               V
Gate to Source Voltage .. V_GSX                12               V
Drain Current .......... I_D                4.5                A
Gate Current..........   I_G                25               mA
Total Power Dissipation .. P_T(*)                25                W
Channel Temperature .... T_ch               175               °C
Storage Temperature ....T_stg        65 to +175       °C
Temperature Cycling ..... T        40 to +120       °C


Description

The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.

To reduce thermal resistance, the NE6500496 has a PHS (Plated Heat Sink) structure.