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NE686

Features: • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz• LOW VOLTAGE/LOW CURRENT OPERATION• HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz|S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz• LOW NOISE: 1.5 dB AT 2.0 GHz• AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PAC...

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SeekIC No. : 004433455 Detail

NE686: Features: • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz• LOW VOLTAGE/LOW CURRENT OPERATION• HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz|S21E|2 = 11 dB @ 1 V, 5 mA, ...

NE686 Data Sheet

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Part Number:
NE686
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH INSERTION POWER GAIN:
       |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz
       |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
• LOW NOISE: 1.5 dB AT 2.0 GHz
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V
5
VCBO
Collector to Base Voltage
V
3
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
10
Tj
OperatingJunction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator
applications. Its high fT make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount package styles.




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