Transistors RF Bipolar Small Signal NPN Lo Noise Hi Gain
NE681M13: Transistors RF Bipolar Small Signal NPN Lo Noise Hi Gain
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Configuration : | Single | Transistor Polarity : | NPN | ||
Emitter- Base Voltage VEBO : | 1.5 V | Continuous Collector Current : | 0.065 A | ||
Power Dissipation : | 140 mW | Package / Case : | M13 |
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
20 |
VCBO |
Collector to Base Voltage |
V |
10 |
VEBO |
Emitter to Base Voltage |
V |
1.5 |
IC |
Collector Current |
mA |
65 |
PT2 |
Total Power Dissipation |
mW |
140 |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
NEC's NE681M13 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE681M13 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles.