NE681M13

Transistors RF Bipolar Small Signal NPN Lo Noise Hi Gain

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NE681M13 Picture
SeekIC No. : 00218950 Detail

NE681M13: Transistors RF Bipolar Small Signal NPN Lo Noise Hi Gain

floor Price/Ceiling Price

Part Number:
NE681M13
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/9

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Product Details

Quick Details

Configuration : Single Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 1.5 V Continuous Collector Current : 0.065 A
Power Dissipation : 140 mW Package / Case : M13    

Description

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Emitter- Base Voltage VEBO : 1.5 V
Continuous Collector Current : 0.065 A
Package / Case : M13
Power Dissipation : 140 mW


Features:

• NEW MINIATURE M13 PACKAGE:
Small transistor outline
1.0 X 0.5 X 0.5 mm
Low profile / 0.50 mm package height
Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT: T = 7 GHz
• LOW NOISE FIGURE:NF = 1.4 dB



Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

20

VCBO
Collector to Base Voltage
V
10
VEBO
Emitter to Base Voltage
V
1.5
IC
Collector Current
mA
65
PT2
Total Power Dissipation
mW
140
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +125
Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.



Description

NEC's NE681M13 transistor is ideal for low noise, high gain, and low cost amplifier applications. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE681M13 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles.




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