NE850R599A

Noise Figure :
Drain Source Voltage VDS : 15 V
Gain : 9.5 dB
Technology Type : MESFET
Power Dissipation : 3 W
Mounting Style : Screw
Gate-Source Breakdown Voltage : - 12 V
Frequency : 7.2 GHz
Maximum Operating Temperature : + 130 C
Forward Transconductance gFS (Max / Min) : 150 mS
Continuous Drain Current : 430 mA
Package / Case : Outline99


Features:

• HIGH OUTPUT POWER: 0.5 W
• HIGH LINEAR GAIN: 9.5 dB
• HIGH EFFICIENCY (PAE): 38%
• SUPERIOR INTERMODULATION DISTORTION
• INDUSTRY STANDARD PACKAGING


Specifications

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	VDSX	15	V
Gate to Source Voltage	VGSO	-18	V
Gate to Drain Voltage	VGSX	-12	V
Drain Current	IDS	IDSS	A
Gate Current	IGS	3.0	mA
Total Power Dissipation	PT	3.0	W
Channel Temperature	Tch	175	°C
Storage Temperature	Tstg	-65 to +175	°C

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The NE850R599A has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known.