Features: • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8• 4 PIN MINI MOLD PACKAGE: NE69039Specifications SYMBOLS PARAMETERS UNITS RATINGS VCEO Collector to Emitter Voltage V 9.0 VCBO Collector ...
NE69039: Features: • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8• 4 PIN MINI MOLD PACKAGE: NE69039Specifications SYMBOLS PARAMETERS...
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SYMBOLS |
PARAMETERS |
UNITS |
RATINGS |
VCEO |
Collector to Emitter Voltage |
V |
9.0 |
VCBO |
Collector to Base Voltage |
V |
6.0 |
VEBO |
Emitter to Base Voltage |
V |
2.0 |
IC |
Collector Current |
mA |
300 |
PT |
Total Power Dissipation |
mW |
200 (CW) |
Tj |
Junction Temperature |
°C |
150 |
TSTG |
Storage Temperature |
°C |
-65 to +125 |
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX output stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The NE69039 is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.